Direct oriented growth of armchair graphene nanoribbons on germanium

Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semicond...

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Main Authors: Jacobberger, Robert M., Kiraly, Brian, Fortin-Deschenes, Matthieu, Levesque, Pierre L., McElhinny, Kyle M., Brady, Gerald J., Rojas Delgado, Richard, Singha Roy, Susmit, Mannix, Andrew, Lagally, Max G., Evans, Paul G., Desjardins, Patrick, Martel, Richard, Hersam, Mark C., Guisinger, Nathan P., Arnold, Michael S.
Format: Online
Language:English
Published: Nature Publishing Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4918381/
id pubmed-4918381
recordtype oai_dc
spelling pubmed-49183812016-07-07 Direct oriented growth of armchair graphene nanoribbons on germanium Jacobberger, Robert M. Kiraly, Brian Fortin-Deschenes, Matthieu Levesque, Pierre L. McElhinny, Kyle M. Brady, Gerald J. Rojas Delgado, Richard Singha Roy, Susmit Mannix, Andrew Lagally, Max G. Evans, Paul G. Desjardins, Patrick Martel, Richard Hersam, Mark C. Guisinger, Nathan P. Arnold, Michael S. Article Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 nm h−1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits. Nature Publishing Group 2015-08-10 /pmc/articles/PMC4918381/ /pubmed/26258594 http://dx.doi.org/10.1038/ncomms9006 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Jacobberger, Robert M.
Kiraly, Brian
Fortin-Deschenes, Matthieu
Levesque, Pierre L.
McElhinny, Kyle M.
Brady, Gerald J.
Rojas Delgado, Richard
Singha Roy, Susmit
Mannix, Andrew
Lagally, Max G.
Evans, Paul G.
Desjardins, Patrick
Martel, Richard
Hersam, Mark C.
Guisinger, Nathan P.
Arnold, Michael S.
spellingShingle Jacobberger, Robert M.
Kiraly, Brian
Fortin-Deschenes, Matthieu
Levesque, Pierre L.
McElhinny, Kyle M.
Brady, Gerald J.
Rojas Delgado, Richard
Singha Roy, Susmit
Mannix, Andrew
Lagally, Max G.
Evans, Paul G.
Desjardins, Patrick
Martel, Richard
Hersam, Mark C.
Guisinger, Nathan P.
Arnold, Michael S.
Direct oriented growth of armchair graphene nanoribbons on germanium
author_facet Jacobberger, Robert M.
Kiraly, Brian
Fortin-Deschenes, Matthieu
Levesque, Pierre L.
McElhinny, Kyle M.
Brady, Gerald J.
Rojas Delgado, Richard
Singha Roy, Susmit
Mannix, Andrew
Lagally, Max G.
Evans, Paul G.
Desjardins, Patrick
Martel, Richard
Hersam, Mark C.
Guisinger, Nathan P.
Arnold, Michael S.
author_sort Jacobberger, Robert M.
title Direct oriented growth of armchair graphene nanoribbons on germanium
title_short Direct oriented growth of armchair graphene nanoribbons on germanium
title_full Direct oriented growth of armchair graphene nanoribbons on germanium
title_fullStr Direct oriented growth of armchair graphene nanoribbons on germanium
title_full_unstemmed Direct oriented growth of armchair graphene nanoribbons on germanium
title_sort direct oriented growth of armchair graphene nanoribbons on germanium
description Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 nm h−1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
publisher Nature Publishing Group
publishDate 2015
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4918381/
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