Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell

Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell

This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM),...

Full description

Bibliographic Details
Main Authors: Brake, M. L., Pender, J. T. P., Buie, M. J., Ricci, A., Soniker, J., Pochan, P. D., Miller, P. A.
Format: Online
Language:English
Published: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1995
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4887231/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4887231/

Similar Items