Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron...
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Nature Publishing Group
2016
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873812/ |
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pubmed-48738122016-06-02 Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films Bouška, M. Pechev, S. Simon, Q. Boidin, R. Nazabal, V. Gutwirth, J. Baudet, E. Němec, P. Article Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. Nature Publishing Group 2016-05-20 /pmc/articles/PMC4873812/ /pubmed/27199107 http://dx.doi.org/10.1038/srep26552 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Bouška, M. Pechev, S. Simon, Q. Boidin, R. Nazabal, V. Gutwirth, J. Baudet, E. Němec, P. |
| spellingShingle |
Bouška, M. Pechev, S. Simon, Q. Boidin, R. Nazabal, V. Gutwirth, J. Baudet, E. Němec, P. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| author_facet |
Bouška, M. Pechev, S. Simon, Q. Boidin, R. Nazabal, V. Gutwirth, J. Baudet, E. Němec, P. |
| author_sort |
Bouška, M. |
| title |
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| title_short |
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| title_full |
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| title_fullStr |
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| title_full_unstemmed |
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films |
| title_sort |
pulsed laser deposited gete-rich gete-sb2te3 thin films |
| description |
Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. |
| publisher |
Nature Publishing Group |
| publishDate |
2016 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4873812/ |
| _version_ |
1613581920521682944 |