Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) i...

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Bibliographic Details
Main Authors: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Format: Online
Language:English
Published: Springer US 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846604/

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