Quantum simulation of the Hubbard model with dopant atoms in silicon

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin li...

Full description

Bibliographic Details
Main Authors:	Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2016
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4842981/

id	pubmed-4842981
recordtype	oai_dc
spelling	pubmed-48429812016-05-05 Quantum simulation of the Hubbard model with dopant atoms in silicon Salfi, J. Mol, J. A. Rahman, R. Klimeck, G. Simmons, M. Y. Hollenberg, L. C. L. Rogge, S. Article In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model. Nature Publishing Group 2016-04-20 /pmc/articles/PMC4842981/ /pubmed/27094205 http://dx.doi.org/10.1038/ncomms11342 Text en Copyright © 2016, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Salfi, J. Mol, J. A. Rahman, R. Klimeck, G. Simmons, M. Y. Hollenberg, L. C. L. Rogge, S.
spellingShingle	Salfi, J. Mol, J. A. Rahman, R. Klimeck, G. Simmons, M. Y. Hollenberg, L. C. L. Rogge, S. Quantum simulation of the Hubbard model with dopant atoms in silicon
author_facet	Salfi, J. Mol, J. A. Rahman, R. Klimeck, G. Simmons, M. Y. Hollenberg, L. C. L. Rogge, S.
author_sort	Salfi, J.
title	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_short	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_full	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_fullStr	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_full_unstemmed	Quantum simulation of the Hubbard model with dopant atoms in silicon
title_sort	quantum simulation of the hubbard model with dopant atoms in silicon
description	In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.
publisher	Nature Publishing Group
publishDate	2016
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4842981/
_version_	1613570251030528000

Quantum simulation of the Hubbard model with dopant atoms in silicon

Similar Items