Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate a...

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Main Authors:	Zhang, S. F., Gan, W. L., Kwon, J., Luo, F. L., Lim, G. J., Wang, J. B., Lew, W. S.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2016
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838865/

id	pubmed-4838865
recordtype	oai_dc
spelling	pubmed-48388652016-04-27 Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire Zhang, S. F. Gan, W. L. Kwon, J. Luo, F. L. Lim, G. J. Wang, J. B. Lew, W. S. Article Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. Nature Publishing Group 2016-04-21 /pmc/articles/PMC4838865/ /pubmed/27098108 http://dx.doi.org/10.1038/srep24804 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Zhang, S. F. Gan, W. L. Kwon, J. Luo, F. L. Lim, G. J. Wang, J. B. Lew, W. S.
spellingShingle	Zhang, S. F. Gan, W. L. Kwon, J. Luo, F. L. Lim, G. J. Wang, J. B. Lew, W. S. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
author_facet	Zhang, S. F. Gan, W. L. Kwon, J. Luo, F. L. Lim, G. J. Wang, J. B. Lew, W. S.
author_sort	Zhang, S. F.
title	Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
title_short	Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
title_full	Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
title_fullStr	Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
title_full_unstemmed	Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire
title_sort	highly efficient domain walls injection in perpendicular magnetic anisotropy nanowire
description	Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.
publisher	Nature Publishing Group
publishDate	2016
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4838865/
_version_	1613568756711161856

Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

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