Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film

Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoelectronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless trans...

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Main Authors:	Li, Sheng-shi, Ji, Wei-xiao, Zhang, Chang-wen, Hu, Shu-jun, Li, Ping, Wang, Pei-ji, Zhang, Bao-min, Cao, Chong-long
Format:	Online
Language:	English
Published:	Nature Publishing Group 2016
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4800414/

id	pubmed-4800414
recordtype	oai_dc
spelling	pubmed-48004142016-03-22 Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film Li, Sheng-shi Ji, Wei-xiao Zhang, Chang-wen Hu, Shu-jun Li, Ping Wang, Pei-ji Zhang, Bao-min Cao, Chong-long Article Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoelectronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless transport edge states using quantum spin Hall (QSH) effect. Based on first-principles calculations, we predict that the methyl-functionalized InBi monolayer (InBiCH3) has no dynamic instability, and hosts QSH state with a band gap as large as 0.29 eV, exhibiting an interesting electronic behavior viable for room-temperature applications. The topological characteristic is confirmed by s-pxy band inversion, topological invariant Z2 number, and the time-reversal symmetry protected helical edge states. Noticeably, the QSH states are tunable and robust against the mechanical strain, electric field and different levels of methyl coverages. We also find that InBiCH3 supported on h-BN substrate maintains a nontrivial QSH state, which harbors the edge states lying within the band gap of substrate. These findings demonstrate that the methyl-functionalized III-V films may be a good QSH platform for device design and fabrication in spintronics. Nature Publishing Group 2016-03-21 /pmc/articles/PMC4800414/ /pubmed/26997163 http://dx.doi.org/10.1038/srep23242 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Li, Sheng-shi Ji, Wei-xiao Zhang, Chang-wen Hu, Shu-jun Li, Ping Wang, Pei-ji Zhang, Bao-min Cao, Chong-long
spellingShingle	Li, Sheng-shi Ji, Wei-xiao Zhang, Chang-wen Hu, Shu-jun Li, Ping Wang, Pei-ji Zhang, Bao-min Cao, Chong-long Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
author_facet	Li, Sheng-shi Ji, Wei-xiao Zhang, Chang-wen Hu, Shu-jun Li, Ping Wang, Pei-ji Zhang, Bao-min Cao, Chong-long
author_sort	Li, Sheng-shi
title	Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
title_short	Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
title_full	Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
title_fullStr	Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
title_full_unstemmed	Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
title_sort	robust room-temperature quantum spin hall effect in methyl-functionalized inbi honeycomb film
description	Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoelectronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless transport edge states using quantum spin Hall (QSH) effect. Based on first-principles calculations, we predict that the methyl-functionalized InBi monolayer (InBiCH3) has no dynamic instability, and hosts QSH state with a band gap as large as 0.29 eV, exhibiting an interesting electronic behavior viable for room-temperature applications. The topological characteristic is confirmed by s-pxy band inversion, topological invariant Z2 number, and the time-reversal symmetry protected helical edge states. Noticeably, the QSH states are tunable and robust against the mechanical strain, electric field and different levels of methyl coverages. We also find that InBiCH3 supported on h-BN substrate maintains a nontrivial QSH state, which harbors the edge states lying within the band gap of substrate. These findings demonstrate that the methyl-functionalized III-V films may be a good QSH platform for device design and fabrication in spintronics.
publisher	Nature Publishing Group
publishDate	2016
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4800414/
_version_	1613555289868468224

Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film

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