Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors
Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. I...
| Main Authors: | , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer US
2016
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4786511/ |