High performance broadband photodetector using fabricated nanowires of bismuth selenide

Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has...

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Main Authors:	Sharma, Alka, Bhattacharyya, Biplab, Srivastava, A. K., Senguttuvan, T. D., Husale, Sudhir
Format:	Online
Language:	English
Published:	Nature Publishing Group 2016
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4707481/

id	pubmed-4707481
recordtype	oai_dc
spelling	pubmed-47074812016-01-20 High performance broadband photodetector using fabricated nanowires of bismuth selenide Sharma, Alka Bhattacharyya, Biplab Srivastava, A. K. Senguttuvan, T. D. Husale, Sudhir Article Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices. Nature Publishing Group 2016-01-11 /pmc/articles/PMC4707481/ /pubmed/26751499 http://dx.doi.org/10.1038/srep19138 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Sharma, Alka Bhattacharyya, Biplab Srivastava, A. K. Senguttuvan, T. D. Husale, Sudhir
spellingShingle	Sharma, Alka Bhattacharyya, Biplab Srivastava, A. K. Senguttuvan, T. D. Husale, Sudhir High performance broadband photodetector using fabricated nanowires of bismuth selenide
author_facet	Sharma, Alka Bhattacharyya, Biplab Srivastava, A. K. Senguttuvan, T. D. Husale, Sudhir
author_sort	Sharma, Alka
title	High performance broadband photodetector using fabricated nanowires of bismuth selenide
title_short	High performance broadband photodetector using fabricated nanowires of bismuth selenide
title_full	High performance broadband photodetector using fabricated nanowires of bismuth selenide
title_fullStr	High performance broadband photodetector using fabricated nanowires of bismuth selenide
title_full_unstemmed	High performance broadband photodetector using fabricated nanowires of bismuth selenide
title_sort	high performance broadband photodetector using fabricated nanowires of bismuth selenide
description	Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.
publisher	Nature Publishing Group
publishDate	2016
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4707481/
_version_	1613522061480689664

High performance broadband photodetector using fabricated nanowires of bismuth selenide

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