Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to...

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Main Authors:	Eschbach, Markus, Młyńczak, Ewa, Kellner, Jens, Kampmeier, Jörn, Lanius, Martin, Neumann, Elmar, Weyrich, Christian, Gehlmann, Mathias, Gospodarič, Pika, Döring, Sven, Mussler, Gregor, Demarina, Nataliya, Luysberg, Martina, Bihlmayer, Gustav, Schäpers, Thomas, Plucinski, Lukasz, Blügel, Stefan, Morgenstern, Markus, Schneider, Claus M., Grützmacher, Detlev
Format:	Online
Language:	English
Published:	Nature Pub. Group 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660041/

id	pubmed-4660041
recordtype	oai_dc
spelling	pubmed-46600412015-12-04 Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures Eschbach, Markus Młyńczak, Ewa Kellner, Jens Kampmeier, Jörn Lanius, Martin Neumann, Elmar Weyrich, Christian Gehlmann, Mathias Gospodarič, Pika Döring, Sven Mussler, Gregor Demarina, Nataliya Luysberg, Martina Bihlmayer, Gustav Schäpers, Thomas Plucinski, Lukasz Blügel, Stefan Morgenstern, Markus Schneider, Claus M. Grützmacher, Detlev Article Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p–n junction made of a heterostructure of two different binary 3D TI materials Bi2Te3 and Sb2Te3 epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper Sb2Te3 layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way for exploring other exotic quantum phenomena in the near future. Nature Pub. Group 2015-11-17 /pmc/articles/PMC4660041/ /pubmed/26572278 http://dx.doi.org/10.1038/ncomms9816 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Eschbach, Markus Młyńczak, Ewa Kellner, Jens Kampmeier, Jörn Lanius, Martin Neumann, Elmar Weyrich, Christian Gehlmann, Mathias Gospodarič, Pika Döring, Sven Mussler, Gregor Demarina, Nataliya Luysberg, Martina Bihlmayer, Gustav Schäpers, Thomas Plucinski, Lukasz Blügel, Stefan Morgenstern, Markus Schneider, Claus M. Grützmacher, Detlev
spellingShingle	Eschbach, Markus Młyńczak, Ewa Kellner, Jens Kampmeier, Jörn Lanius, Martin Neumann, Elmar Weyrich, Christian Gehlmann, Mathias Gospodarič, Pika Döring, Sven Mussler, Gregor Demarina, Nataliya Luysberg, Martina Bihlmayer, Gustav Schäpers, Thomas Plucinski, Lukasz Blügel, Stefan Morgenstern, Markus Schneider, Claus M. Grützmacher, Detlev Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
author_facet	Eschbach, Markus Młyńczak, Ewa Kellner, Jens Kampmeier, Jörn Lanius, Martin Neumann, Elmar Weyrich, Christian Gehlmann, Mathias Gospodarič, Pika Döring, Sven Mussler, Gregor Demarina, Nataliya Luysberg, Martina Bihlmayer, Gustav Schäpers, Thomas Plucinski, Lukasz Blügel, Stefan Morgenstern, Markus Schneider, Claus M. Grützmacher, Detlev
author_sort	Eschbach, Markus
title	Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
title_short	Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
title_full	Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
title_fullStr	Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
title_full_unstemmed	Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
title_sort	realization of a vertical topological p–n junction in epitaxial sb2te3/bi2te3 heterostructures
description	Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p–n junction made of a heterostructure of two different binary 3D TI materials Bi2Te3 and Sb2Te3 epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper Sb2Te3 layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way for exploring other exotic quantum phenomena in the near future.
publisher	Nature Pub. Group
publishDate	2015
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660041/
_version_	1613506075647016960

Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

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