Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2...

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Bibliographic Details
Main Authors: Ki Min, Bok, Kim, Seong K., Jun Kim, Seong, Ho Kim, Sung, Kang, Min-A, Park, Chong-Yun, Song, Wooseok, Myung, Sung, Lim, Jongsun, An, Ki-Seok
Format: Online
Language:English
Published: Nature Publishing Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4632157/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4632157/

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