Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride
MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts t...
Main Authors: | , , , , , , , , |
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Format: | Online |
Language: | English |
Published: |
Nature Publishing Group
2015
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Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4602223/ |