Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts t...

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Bibliographic Details
Main Authors: Lin, Shisheng, Li, Xiaoqiang, Wang, Peng, Xu, Zhijuan, Zhang, Shengjiao, Zhong, Huikai, Wu, Zhiqian, Xu, Wenli, Chen, Hongsheng
Format: Online
Language:English
Published: Nature Publishing Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4602223/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4602223/

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