Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus...

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Main Authors:	Moraru, Daniel, Samanta, Arup, Tyszka, Krzysztof, Anh, Le The, Muruganathan, Manoharan, Mizuno, Takeshi, Jablonski, Ryszard, Mizuta, Hiroshi, Tabe, Michiharu
Format:	Online
Language:	English
Published:	Springer US 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4582038/

id	pubmed-4582038
recordtype	oai_dc
spelling	pubmed-45820382015-10-02 Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices Moraru, Daniel Samanta, Arup Tyszka, Krzysztof Anh, Le The Muruganathan, Manoharan Mizuno, Takeshi Jablonski, Ryszard Mizuta, Hiroshi Tabe, Michiharu Nano Review Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices. Springer US 2015-09-24 /pmc/articles/PMC4582038/ /pubmed/26403925 http://dx.doi.org/10.1186/s11671-015-1076-z Text en © Moraru et al. 2015 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Moraru, Daniel Samanta, Arup Tyszka, Krzysztof Anh, Le The Muruganathan, Manoharan Mizuno, Takeshi Jablonski, Ryszard Mizuta, Hiroshi Tabe, Michiharu
spellingShingle	Moraru, Daniel Samanta, Arup Tyszka, Krzysztof Anh, Le The Muruganathan, Manoharan Mizuno, Takeshi Jablonski, Ryszard Mizuta, Hiroshi Tabe, Michiharu Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
author_facet	Moraru, Daniel Samanta, Arup Tyszka, Krzysztof Anh, Le The Muruganathan, Manoharan Mizuno, Takeshi Jablonski, Ryszard Mizuta, Hiroshi Tabe, Michiharu
author_sort	Moraru, Daniel
title	Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
title_short	Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
title_full	Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
title_fullStr	Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
title_full_unstemmed	Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
title_sort	tunneling in systems of coupled dopant-atoms in silicon nano-devices
description	Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.
publisher	Springer US
publishDate	2015
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4582038/
_version_	1613479457667940352

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

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