Ionization-induced annealing of pre-existing defects in silicon carbide
A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. It...
| Main Authors: | , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Nature Pub. Group
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4557342/ |