Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the prese...

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Main Authors: Hupfauer, T., Matos-Abiague, A., Gmitra, M., Schiller, F., Loher, J., Bougeard, D., Back, C. H., Fabian, J., Weiss, D.
Format: Online
Language:English
Published: Nature Pub. Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4468871/
id pubmed-4468871
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spelling pubmed-44688712015-06-30 Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide Hupfauer, T. Matos-Abiague, A. Gmitra, M. Schiller, F. Loher, J. Bougeard, D. Back, C. H. Fabian, J. Weiss, D. Article The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces—the reduced structural symmetry creates emergent spin–orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin–orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin–orbit fields. Nature Pub. Group 2015-06-08 /pmc/articles/PMC4468871/ /pubmed/26051594 http://dx.doi.org/10.1038/ncomms8374 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Hupfauer, T.
Matos-Abiague, A.
Gmitra, M.
Schiller, F.
Loher, J.
Bougeard, D.
Back, C. H.
Fabian, J.
Weiss, D.
spellingShingle Hupfauer, T.
Matos-Abiague, A.
Gmitra, M.
Schiller, F.
Loher, J.
Bougeard, D.
Back, C. H.
Fabian, J.
Weiss, D.
Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
author_facet Hupfauer, T.
Matos-Abiague, A.
Gmitra, M.
Schiller, F.
Loher, J.
Bougeard, D.
Back, C. H.
Fabian, J.
Weiss, D.
author_sort Hupfauer, T.
title Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
title_short Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
title_full Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
title_fullStr Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
title_full_unstemmed Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
title_sort emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
description The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces—the reduced structural symmetry creates emergent spin–orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin–orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin–orbit fields.
publisher Nature Pub. Group
publishDate 2015
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4468871/
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