Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature
We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer US
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451189/ |