The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − xAlxO3 films deposited by atomic layer deposition
The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 − xAlxO...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer US
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4425714/ |