Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semicon...
| Main Authors: | , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4236754/ |