Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy
The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111)...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2013
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4234272/ |