Indium segregation measured in InGaN quantum well layer

The indium segregation in InGaN well layer is confirmed by a nondestructive combined method of experiment and numerical simulation, which is beyond the traditional method. The pre-deposited indium atoms before InGaN well layer growth are first carried out to prevent indium atoms exchange between the...

Full description

Bibliographic Details
Main Authors: Deng, Zhen, Jiang, Yang, Wang, Wenxin, Cheng, Liwen, Li, Wei, Lu, Wei, Jia, Haiqiang, Liu, Wuming, Zhou, Junming, Chen, Hong
Format: Online
Language:English
Published: Nature Publishing Group 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4206869/