In situ observation of step-edge in-plane growth of graphene in a STEM
It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III–V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microsc...
| Main Authors: | , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Nature Pub. Group
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4059939/ |