Charge transport mechanisms and memory effects in amorphous TaNx thin films

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostr...

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Main Authors:	Spyropoulos-Antonakakis, Nikolaos, Sarantopoulou, Evangelia, Drazic, Goran, Kollia, Zoe, Christofilos, Dimitrios, Kourouklis, Gerasimos, Palles, Dimitrios, Cefalas, Alkiviadis Constantinos
Format:	Online
Language:	English
Published:	Springer 2013
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4016540/

id	pubmed-4016540
recordtype	oai_dc
spelling	pubmed-40165402014-05-23 Charge transport mechanisms and memory effects in amorphous TaNx thin films Spyropoulos-Antonakakis, Nikolaos Sarantopoulou, Evangelia Drazic, Goran Kollia, Zoe Christofilos, Dimitrios Kourouklis, Gerasimos Palles, Dimitrios Cefalas, Alkiviadis Constantinos Nano Express Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport properties of a-TaNx amorphous thin films deposited in two different substrates are investigated by conductive atomic force microscopy. The nitride films are grown either on Au (100) or Si [100] substrates by pulsed laser deposition at 157 nm in nitrogen environment. For the a-TaNx films deposited on Au, it is found that they display a negligible leakage current until a high bias voltage is reached. On the contrary, a much lower threshold voltage for the leakage current and a lower total resistance is observed for the a-TaNx film deposited on the Si substrate. Furthermore, I-V characteristics of the a-TaNx film deposited on Au show significant hysteresis effects for both polarities of bias voltage, while for the film deposited on Si hysteresis, effects appear only for positive bias voltage, suggesting that with the usage of the appropriate substrate, the a-TaNx nanodomains may have potential use as charge memory devices. Springer 2013-10-17 /pmc/articles/PMC4016540/ /pubmed/24134740 http://dx.doi.org/10.1186/1556-276X-8-432 Text en Copyright © 2013 Spyropoulos-Antonakakis et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Spyropoulos-Antonakakis, Nikolaos Sarantopoulou, Evangelia Drazic, Goran Kollia, Zoe Christofilos, Dimitrios Kourouklis, Gerasimos Palles, Dimitrios Cefalas, Alkiviadis Constantinos
spellingShingle	Spyropoulos-Antonakakis, Nikolaos Sarantopoulou, Evangelia Drazic, Goran Kollia, Zoe Christofilos, Dimitrios Kourouklis, Gerasimos Palles, Dimitrios Cefalas, Alkiviadis Constantinos Charge transport mechanisms and memory effects in amorphous TaNx thin films
author_facet	Spyropoulos-Antonakakis, Nikolaos Sarantopoulou, Evangelia Drazic, Goran Kollia, Zoe Christofilos, Dimitrios Kourouklis, Gerasimos Palles, Dimitrios Cefalas, Alkiviadis Constantinos
author_sort	Spyropoulos-Antonakakis, Nikolaos
title	Charge transport mechanisms and memory effects in amorphous TaNx thin films
title_short	Charge transport mechanisms and memory effects in amorphous TaNx thin films
title_full	Charge transport mechanisms and memory effects in amorphous TaNx thin films
title_fullStr	Charge transport mechanisms and memory effects in amorphous TaNx thin films
title_full_unstemmed	Charge transport mechanisms and memory effects in amorphous TaNx thin films
title_sort	charge transport mechanisms and memory effects in amorphous tanx thin films
description	Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport properties of a-TaNx amorphous thin films deposited in two different substrates are investigated by conductive atomic force microscopy. The nitride films are grown either on Au (100) or Si [100] substrates by pulsed laser deposition at 157 nm in nitrogen environment. For the a-TaNx films deposited on Au, it is found that they display a negligible leakage current until a high bias voltage is reached. On the contrary, a much lower threshold voltage for the leakage current and a lower total resistance is observed for the a-TaNx film deposited on the Si substrate. Furthermore, I-V characteristics of the a-TaNx film deposited on Au show significant hysteresis effects for both polarities of bias voltage, while for the film deposited on Si hysteresis, effects appear only for positive bias voltage, suggesting that with the usage of the appropriate substrate, the a-TaNx nanodomains may have potential use as charge memory devices.
publisher	Springer
publishDate	2013
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4016540/
_version_	1612087577861423104

Charge transport mechanisms and memory effects in amorphous TaNx thin films

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