Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the u...

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Bibliographic Details
Main Authors: Nayak, Pradipta K., Caraveo-Frescas, J. A., Wang, Zhenwei, Hedhili, M. N., Wang, Q. X., Alshareef, H. N.
Format: Online
Language:English
Published: Nature Publishing Group 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3985073/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3985073/

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