Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices

We performed a systematic investigation on the dynamic behavior of conduction filaments (CFs) in WO3-x-based devices. It was found that the electric forming produced an electric structure consisted of a conductive channel (virtual cathode) started from cathode and an insulating band surrounding anod...

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Main Authors:	Hong, D. S., Chen, Y. S., Li, Ying, Yang, H. W., Wei, L. L., Shen, B. G., Sun, J. R.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2014
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920219/

id	pubmed-3920219
recordtype	oai_dc
spelling	pubmed-39202192014-02-13 Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices Hong, D. S. Chen, Y. S. Li, Ying Yang, H. W. Wei, L. L. Shen, B. G. Sun, J. R. Article We performed a systematic investigation on the dynamic behavior of conduction filaments (CFs) in WO3-x-based devices. It was found that the electric forming produced an electric structure consisted of a conductive channel (virtual cathode) started from cathode and an insulating band surrounding anode. Both the virtual cathode and the insulating region varied with repeated resistance switching. Set/reset operation affected device resistance mainly by modifying the CF, which formed in the setting process together with an insulating halo that separated it from the virtual cathode. The device resistance exhibited a sudden change exactly corresponding to the emergence/vanishing of the CF and a smooth variation corresponding to the outward/inward expansion/contraction of the insulating halo. Anode ablation occurred after repeated cycling, and it is the key factor affecting the endurance of device. Nature Publishing Group 2014-02-11 /pmc/articles/PMC3920219/ /pubmed/24514950 http://dx.doi.org/10.1038/srep04058 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareALike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Hong, D. S. Chen, Y. S. Li, Ying Yang, H. W. Wei, L. L. Shen, B. G. Sun, J. R.
spellingShingle	Hong, D. S. Chen, Y. S. Li, Ying Yang, H. W. Wei, L. L. Shen, B. G. Sun, J. R. Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
author_facet	Hong, D. S. Chen, Y. S. Li, Ying Yang, H. W. Wei, L. L. Shen, B. G. Sun, J. R.
author_sort	Hong, D. S.
title	Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
title_short	Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
title_full	Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
title_fullStr	Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
title_full_unstemmed	Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
title_sort	evolution of conduction channel and its effect on resistance switching for au-wo3-x–au devices
description	We performed a systematic investigation on the dynamic behavior of conduction filaments (CFs) in WO3-x-based devices. It was found that the electric forming produced an electric structure consisted of a conductive channel (virtual cathode) started from cathode and an insulating band surrounding anode. Both the virtual cathode and the insulating region varied with repeated resistance switching. Set/reset operation affected device resistance mainly by modifying the CF, which formed in the setting process together with an insulating halo that separated it from the virtual cathode. The device resistance exhibited a sudden change exactly corresponding to the emergence/vanishing of the CF and a smooth variation corresponding to the outward/inward expansion/contraction of the insulating halo. Anode ablation occurred after repeated cycling, and it is the key factor affecting the endurance of device.
publisher	Nature Publishing Group
publishDate	2014
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920219/
_version_	1612056997341954048

Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices

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