Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements
Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and ca...
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| Format: | Online |
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Springer
2013
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3849392/ |
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pubmed-38493922013-12-05 Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements Murata, Masayuki Hasegawa, Yasuhiro Nano Express Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the bismuth nanowire, and a difference between the resistivities of the two-wire and four-wire methods was observed. It was concluded that the two-wire method was unsuitable for estimation of the resistivity due to the influence of contact resistance, even if the magnitude of the bismuth nanowire resistance was greater than the kilo-ohm order. Furthermore, Hall measurement of a 4-μm-diameter bismuth microwire was also performed as a trial, and the evaluated temperature dependence of the carrier mobility was in agreement with that for bulk bismuth, which indicates that the carrier mobility was successfully measured using this technique. Springer 2013-09-26 /pmc/articles/PMC3849392/ /pubmed/24070421 http://dx.doi.org/10.1186/1556-276X-8-400 Text en Copyright © 2013 Murata and Hasegawa; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Murata, Masayuki Hasegawa, Yasuhiro |
| spellingShingle |
Murata, Masayuki Hasegawa, Yasuhiro Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| author_facet |
Murata, Masayuki Hasegawa, Yasuhiro |
| author_sort |
Murata, Masayuki |
| title |
Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| title_short |
Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| title_full |
Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| title_fullStr |
Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| title_full_unstemmed |
Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements |
| title_sort |
focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for hall measurements |
| description |
Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the bismuth nanowire, and a difference between the resistivities of the two-wire and four-wire methods was observed. It was concluded that the two-wire method was unsuitable for estimation of the resistivity due to the influence of contact resistance, even if the magnitude of the bismuth nanowire resistance was greater than the kilo-ohm order. Furthermore, Hall measurement of a 4-μm-diameter bismuth microwire was also performed as a trial, and the evaluated temperature dependence of the carrier mobility was in agreement with that for bulk bismuth, which indicates that the carrier mobility was successfully measured using this technique. |
| publisher |
Springer |
| publishDate |
2013 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3849392/ |
| _version_ |
1612033758014210048 |