Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al2O3) film for passivation on the whole surface of t...

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Bibliographic Details
Main Authors: Kato, Shinya, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Watanabe, Yuya, Yamada, Akira, Ohta, Yoshimi, Niwa, Yusuke, Hirota, Masaki
Format: Online
Language:English
Published: Springer 2013
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/