InAs-mediated growth of vertical InSb nanowires on Si substrates

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...

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Main Authors:	Li, Tianfeng, Gao, Lizhen, Lei, Wen, Guo, Lijun, Pan, Huayong, Yang, Tao, Chen, Yonghai, Wang, Zhanguo
Format:	Online
Language:	English
Published:	Springer 2013
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3726463/

id	pubmed-3726463
recordtype	oai_dc
spelling	pubmed-37264632013-07-30 InAs-mediated growth of vertical InSb nanowires on Si substrates Li, Tianfeng Gao, Lizhen Lei, Wen Guo, Lijun Pan, Huayong Yang, Tao Chen, Yonghai Wang, Zhanguo Nano Express In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications. Springer 2013-07-24 /pmc/articles/PMC3726463/ /pubmed/23883403 http://dx.doi.org/10.1186/1556-276X-8-333 Text en Copyright ©2013 Li et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Li, Tianfeng Gao, Lizhen Lei, Wen Guo, Lijun Pan, Huayong Yang, Tao Chen, Yonghai Wang, Zhanguo
spellingShingle	Li, Tianfeng Gao, Lizhen Lei, Wen Guo, Lijun Pan, Huayong Yang, Tao Chen, Yonghai Wang, Zhanguo InAs-mediated growth of vertical InSb nanowires on Si substrates
author_facet	Li, Tianfeng Gao, Lizhen Lei, Wen Guo, Lijun Pan, Huayong Yang, Tao Chen, Yonghai Wang, Zhanguo
author_sort	Li, Tianfeng
title	InAs-mediated growth of vertical InSb nanowires on Si substrates
title_short	InAs-mediated growth of vertical InSb nanowires on Si substrates
title_full	InAs-mediated growth of vertical InSb nanowires on Si substrates
title_fullStr	InAs-mediated growth of vertical InSb nanowires on Si substrates
title_full_unstemmed	InAs-mediated growth of vertical InSb nanowires on Si substrates
title_sort	inas-mediated growth of vertical insb nanowires on si substrates
description	In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.
publisher	Springer
publishDate	2013
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3726463/
_version_	1611998784023166976

InAs-mediated growth of vertical InSb nanowires on Si substrates

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