Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission elect...

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Bibliographic Details
Main Authors: Ding, Shi-Jin, Chen, Hong-Bing, Cui, Xing-Mei, Chen, Sun, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei, Shen, Chen
Format: Online
Language:English
Published: Springer 2013
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3666895/

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