Comparative Study on the Performance of Five Different Hall Effect Devices
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related se...
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Molecular Diversity Preservation International (MDPI)
2013
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pubmed-36494312013-06-04 Comparative Study on the Performance of Five Different Hall Effect Devices Paun, Maria-Alexandra Sallese, Jean-Michel Kayal, Maher Article Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. Molecular Diversity Preservation International (MDPI) 2013-02-05 /pmc/articles/PMC3649431/ /pubmed/23385419 http://dx.doi.org/10.3390/s130202093 Text en © 2013 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
repository_type |
Open Access Journal |
institution_category |
Foreign Institution |
institution |
US National Center for Biotechnology Information |
building |
NCBI PubMed |
collection |
Online Access |
language |
English |
format |
Online |
author |
Paun, Maria-Alexandra Sallese, Jean-Michel Kayal, Maher |
spellingShingle |
Paun, Maria-Alexandra Sallese, Jean-Michel Kayal, Maher Comparative Study on the Performance of Five Different Hall Effect Devices |
author_facet |
Paun, Maria-Alexandra Sallese, Jean-Michel Kayal, Maher |
author_sort |
Paun, Maria-Alexandra |
title |
Comparative Study on the Performance of Five Different Hall Effect Devices |
title_short |
Comparative Study on the Performance of Five Different Hall Effect Devices |
title_full |
Comparative Study on the Performance of Five Different Hall Effect Devices |
title_fullStr |
Comparative Study on the Performance of Five Different Hall Effect Devices |
title_full_unstemmed |
Comparative Study on the Performance of Five Different Hall Effect Devices |
title_sort |
comparative study on the performance of five different hall effect devices |
description |
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. |
publisher |
Molecular Diversity Preservation International (MDPI) |
publishDate |
2013 |
url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649431/ |
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