Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon
Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that cata...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2013
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639818/ |