CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With op...

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Main Authors: Zhou, Zhengji, Yuan, Shengjie, Fan, Junqi, Hou, Zeliang, Zhou, Wenhui, Du, Zuliang, Wu, Sixin
Format: Online
Language:English
Published: Springer 2012
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552836/
id pubmed-3552836
recordtype oai_dc
spelling pubmed-35528362013-01-28 CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization Zhou, Zhengji Yuan, Shengjie Fan, Junqi Hou, Zeliang Zhou, Wenhui Du, Zuliang Wu, Sixin Nano Express CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule. Springer 2012-11-27 /pmc/articles/PMC3552836/ /pubmed/23181940 http://dx.doi.org/10.1186/1556-276X-7-652 Text en Copyright ©2012 Zhou et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Zhou, Zhengji
Yuan, Shengjie
Fan, Junqi
Hou, Zeliang
Zhou, Wenhui
Du, Zuliang
Wu, Sixin
spellingShingle Zhou, Zhengji
Yuan, Shengjie
Fan, Junqi
Hou, Zeliang
Zhou, Wenhui
Du, Zuliang
Wu, Sixin
CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
author_facet Zhou, Zhengji
Yuan, Shengjie
Fan, Junqi
Hou, Zeliang
Zhou, Wenhui
Du, Zuliang
Wu, Sixin
author_sort Zhou, Zhengji
title CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
title_short CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
title_full CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
title_fullStr CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
title_full_unstemmed CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
title_sort cuins2 quantum dot-sensitized tio2 nanorod array photoelectrodes: synthesis and performance optimization
description CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule.
publisher Springer
publishDate 2012
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552836/
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