Non-oxidized porous silicon-based power AC switch peripheries

Non-oxidized porous silicon-based power AC switch peripheries

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems...

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Main Authors: Menard, Samuel, Fèvre, Angélique, Valente, Damien, Billoué, Jérôme, Gautier, Gaël
Format: Online
Language:English
Published: Springer 2012
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494560/
id pubmed-3494560
recordtype oai_dc
spelling pubmed-34945602012-11-13 Non-oxidized porous silicon-based power AC switch peripheries Menard, Samuel Fèvre, Angélique Valente, Damien Billoué, Jérôme Gautier, Gaël Nano Express We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries. Springer 2012-10-11 /pmc/articles/PMC3494560/ /pubmed/23057856 http://dx.doi.org/10.1186/1556-276X-7-566 Text en Copyright ©2012 Menard et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Menard, Samuel
Fèvre, Angélique
Valente, Damien
Billoué, Jérôme
Gautier, Gaël
spellingShingle Menard, Samuel
Fèvre, Angélique
Valente, Damien
Billoué, Jérôme
Gautier, Gaël
Non-oxidized porous silicon-based power AC switch peripheries
author_facet Menard, Samuel
Fèvre, Angélique
Valente, Damien
Billoué, Jérôme
Gautier, Gaël
author_sort Menard, Samuel
title Non-oxidized porous silicon-based power AC switch peripheries
title_short Non-oxidized porous silicon-based power AC switch peripheries
title_full Non-oxidized porous silicon-based power AC switch peripheries
title_fullStr Non-oxidized porous silicon-based power AC switch peripheries
title_full_unstemmed Non-oxidized porous silicon-based power AC switch peripheries
title_sort non-oxidized porous silicon-based power ac switch peripheries
description We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.
publisher Springer
publishDate 2012
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494560/
_version_ 1611923167832440832

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