Quantum dot-doped porous silicon metal–semiconductor metal photodetector

In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger...

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Main Authors:	Chou, Chia-Man, Cho, Hsing-Tzu, Hsiao, Vincent K S, Yong, Ken-Tye, Law, Wing-Cheung
Format:	Online
Language:	English
Published:	Springer 2012
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494523/

id	pubmed-3494523
recordtype	oai_dc
spelling	pubmed-34945232012-11-13 Quantum dot-doped porous silicon metal–semiconductor metal photodetector Chou, Chia-Man Cho, Hsing-Tzu Hsiao, Vincent K S Yong, Ken-Tye Law, Wing-Cheung Nano Express In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS. Springer 2012-06-06 /pmc/articles/PMC3494523/ /pubmed/22672788 http://dx.doi.org/10.1186/1556-276X-7-291 Text en Copyright ©2012 Chou et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Chou, Chia-Man Cho, Hsing-Tzu Hsiao, Vincent K S Yong, Ken-Tye Law, Wing-Cheung
spellingShingle	Chou, Chia-Man Cho, Hsing-Tzu Hsiao, Vincent K S Yong, Ken-Tye Law, Wing-Cheung Quantum dot-doped porous silicon metal–semiconductor metal photodetector
author_facet	Chou, Chia-Man Cho, Hsing-Tzu Hsiao, Vincent K S Yong, Ken-Tye Law, Wing-Cheung
author_sort	Chou, Chia-Man
title	Quantum dot-doped porous silicon metal–semiconductor metal photodetector
title_short	Quantum dot-doped porous silicon metal–semiconductor metal photodetector
title_full	Quantum dot-doped porous silicon metal–semiconductor metal photodetector
title_fullStr	Quantum dot-doped porous silicon metal–semiconductor metal photodetector
title_full_unstemmed	Quantum dot-doped porous silicon metal–semiconductor metal photodetector
title_sort	quantum dot-doped porous silicon metal–semiconductor metal photodetector
description	In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.
publisher	Springer
publishDate	2012
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494523/
_version_	1611923149777010688

Quantum dot-doped porous silicon metal–semiconductor metal photodetector

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