Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradia...

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Main Authors: Kumar, Yogesh, Herrera-Zaldivar, Manuel, Olive-Méndez, Sion Federico, Singh, Fouran, Mathew, Xavier, Agarwal, Vivechana
Format: Online
Language:English
Published: Springer 2012
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432626/
id pubmed-3432626
recordtype oai_dc
spelling pubmed-34326262012-09-04 Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion Kumar, Yogesh Herrera-Zaldivar, Manuel Olive-Méndez, Sion Federico Singh, Fouran Mathew, Xavier Agarwal, Vivechana Nano Express Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions. Springer 2012-07-02 /pmc/articles/PMC3432626/ /pubmed/22748164 http://dx.doi.org/10.1186/1556-276X-7-366 Text en Copyright ©2012 Kumar et al., licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Kumar, Yogesh
Herrera-Zaldivar, Manuel
Olive-Méndez, Sion Federico
Singh, Fouran
Mathew, Xavier
Agarwal, Vivechana
spellingShingle Kumar, Yogesh
Herrera-Zaldivar, Manuel
Olive-Méndez, Sion Federico
Singh, Fouran
Mathew, Xavier
Agarwal, Vivechana
Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
author_facet Kumar, Yogesh
Herrera-Zaldivar, Manuel
Olive-Méndez, Sion Federico
Singh, Fouran
Mathew, Xavier
Agarwal, Vivechana
author_sort Kumar, Yogesh
title Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
title_short Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
title_full Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
title_fullStr Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
title_full_unstemmed Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
title_sort modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion
description Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions.
publisher Springer
publishDate 2012
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432626/
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