Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineeri...

Full description

Bibliographic Details
Main Authors:	Herng, T. S., Kumar, A., Ong, C. S., Feng, Y. P., Lu, Y. H., Zeng, K. Y., Ding, J.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2012
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3421435/

id	pubmed-3421435
recordtype	oai_dc
spelling	pubmed-34214352012-08-17 Investigation of the non-volatile resistance change in noncentrosymmetric compounds Herng, T. S. Kumar, A. Ong, C. S. Feng, Y. P. Lu, Y. H. Zeng, K. Y. Ding, J. Article Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineering. Using a noncentrosymmetric material of ZnO as example, we first transformed ZnO into high resistance state. Then ZnO electrical polarization was probed and its domains polarized 180° along the [001]-axis with long-lasting memory effect (>25 hours). Based on our experimental observations, we have developed a vacancy-mediated pseudoferroelectricity model. Our first-principle calculations propose that vacancy defects initiate a spontaneous inverted domains nucleation at grain boundaries, and then they grow in the presence of an electrical field. The propagation of inverted domains follows the scanning tip motion under applied electrical field, leading to the growth of polarized domains over large areas. Nature Publishing Group 2012-08-17 /pmc/articles/PMC3421435/ /pubmed/22905318 http://dx.doi.org/10.1038/srep00587 Text en Copyright © 2012, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Herng, T. S. Kumar, A. Ong, C. S. Feng, Y. P. Lu, Y. H. Zeng, K. Y. Ding, J.
spellingShingle	Herng, T. S. Kumar, A. Ong, C. S. Feng, Y. P. Lu, Y. H. Zeng, K. Y. Ding, J. Investigation of the non-volatile resistance change in noncentrosymmetric compounds
author_facet	Herng, T. S. Kumar, A. Ong, C. S. Feng, Y. P. Lu, Y. H. Zeng, K. Y. Ding, J.
author_sort	Herng, T. S.
title	Investigation of the non-volatile resistance change in noncentrosymmetric compounds
title_short	Investigation of the non-volatile resistance change in noncentrosymmetric compounds
title_full	Investigation of the non-volatile resistance change in noncentrosymmetric compounds
title_fullStr	Investigation of the non-volatile resistance change in noncentrosymmetric compounds
title_full_unstemmed	Investigation of the non-volatile resistance change in noncentrosymmetric compounds
title_sort	investigation of the non-volatile resistance change in noncentrosymmetric compounds
description	Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineering. Using a noncentrosymmetric material of ZnO as example, we first transformed ZnO into high resistance state. Then ZnO electrical polarization was probed and its domains polarized 180° along the [001]-axis with long-lasting memory effect (>25 hours). Based on our experimental observations, we have developed a vacancy-mediated pseudoferroelectricity model. Our first-principle calculations propose that vacancy defects initiate a spontaneous inverted domains nucleation at grain boundaries, and then they grow in the presence of an electrical field. The propagation of inverted domains follows the scanning tip motion under applied electrical field, leading to the growth of polarized domains over large areas.
publisher	Nature Publishing Group
publishDate	2012
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3421435/
_version_	1611550397774692352

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Similar Items