Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic che...
Main Authors: | , , , , , , , , , , , |
---|---|
Format: | Online |
Language: | English |
Published: |
Springer
2012
|
Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292944/ |