The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were form...
| Main Authors: | , , , , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2012
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3278347/ |