SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several di...
| Main Authors: | , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2012
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276418/ |