Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Molecular Diversity Preservation International (MDPI)
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231593/ |