n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of...

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Main Authors: Gutsche, Christoph, Lysov, Andrey, Regolin, Ingo, Blekker, Kai, Prost, Werner, Tegude, Franz-Josef
Format: Online
Language:English
Published: Springer 2010
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212212/
id pubmed-3212212
recordtype oai_dc
spelling pubmed-32122122011-11-09 n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires Gutsche, Christoph Lysov, Andrey Regolin, Ingo Blekker, Kai Prost, Werner Tegude, Franz-Josef Nano Express In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices. Springer 2010-10-07 /pmc/articles/PMC3212212/ /pubmed/27502686 http://dx.doi.org/10.1007/s11671-010-9815-7 Text en Copyright ©2010 Gutsche et al. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Gutsche, Christoph
Lysov, Andrey
Regolin, Ingo
Blekker, Kai
Prost, Werner
Tegude, Franz-Josef
spellingShingle Gutsche, Christoph
Lysov, Andrey
Regolin, Ingo
Blekker, Kai
Prost, Werner
Tegude, Franz-Josef
n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
author_facet Gutsche, Christoph
Lysov, Andrey
Regolin, Ingo
Blekker, Kai
Prost, Werner
Tegude, Franz-Josef
author_sort Gutsche, Christoph
title n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
title_short n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
title_full n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
title_fullStr n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
title_full_unstemmed n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
title_sort n-type doping of vapor–liquid–solid grown gaas nanowires
description In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.
publisher Springer
publishDate 2010
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212212/
_version_ 1611486426534248448

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