The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes

In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtai...

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Main Authors:	Alvi, N H, ul Hasan, Kamran, Nur, Omer, Willander, Magnus
Format:	Online
Language:	English
Published:	Springer 2011
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211177/

id	pubmed-3211177
recordtype	oai_dc
spelling	pubmed-32111772011-11-09 The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes Alvi, N H ul Hasan, Kamran Nur, Omer Willander, Magnus Nano Express In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96. Springer 2011-02-10 /pmc/articles/PMC3211177/ /pubmed/21711671 http://dx.doi.org/10.1186/1556-276X-6-130 Text en Copyright ©2011 Alvi et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Alvi, N H ul Hasan, Kamran Nur, Omer Willander, Magnus
spellingShingle	Alvi, N H ul Hasan, Kamran Nur, Omer Willander, Magnus The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
author_facet	Alvi, N H ul Hasan, Kamran Nur, Omer Willander, Magnus
author_sort	Alvi, N H
title	The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
title_short	The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
title_full	The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
title_fullStr	The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
title_full_unstemmed	The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
title_sort	origin of the red emission in n-zno nanotubes/p-gan white light emitting diodes
description	In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.
publisher	Springer
publishDate	2011
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211177/
_version_	1611486088631681024

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes

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