Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localiz...

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Main Authors: Lo, Shun-Tsung, Chuang, Chiashain, Lin, Sheng-Di, Chen, Kuang Yao, Liang, Chi-Te, Lin, Shih-Wei, Wu, Jau-Yang, Yeh, Mao-Rong
Format: Online
Language:English
Published: Springer 2011
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211146/
id pubmed-3211146
recordtype oai_dc
spelling pubmed-32111462011-11-09 Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy Lo, Shun-Tsung Chuang, Chiashain Lin, Sheng-Di Chen, Kuang Yao Liang, Chi-Te Lin, Shih-Wei Wu, Jau-Yang Yeh, Mao-Rong Nano Express Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film. Springer 2011-01-26 /pmc/articles/PMC3211146/ /pubmed/24576326 http://dx.doi.org/10.1186/1556-276X-6-102 Text en Copyright ©2011 Liang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
spellingShingle Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
author_facet Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
author_sort Lo, Shun-Tsung
title Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_short Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_full Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_fullStr Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_full_unstemmed Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_sort magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy
description Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.
publisher Springer
publishDate 2011
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211146/
_version_ 1611486069592686592

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