Heteroepitaxial growth of vacuum-evaporated si-ge films on nanostructured silicon substrates
In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nan...
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| Format: | Journal |
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Malaysian Journal of Analytical Sciences, Malaysian Analytical Sciences Society (ANALIS)
2015
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| Online Access: | http://www.myjurnal.my/public/article-view.php?id=94467 |