Inversion Layer Quantization in Arbitrarily Oriented Substrates: An Analytical Study
An analytical model for the inversion layer quantization for Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) with different crystallographic substrate orientations (100), (110) and (111) has been developed. The capacitance- voltage (C-V) and threshold analysis have also been studied usin...
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| Format: | Journal |
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Elektrika: Journal of Electrical Engineering, Universiti Teknologi Malaysia
2010
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| Online Access: | http://www.myjurnal.my/public/article-view.php?id=9309 |