Comparative analysis of quantum effects in nanoscale multigate mosfets using variational approach
In this work, the performance of multiple-gate SOI MOSFETs is analysed using variational approach including quantum effects. An analytical model is derived to accounting the quantum effects at the silicon (Si)/silicon dioxide (SiO2 ) interface. A general procedure is used for calculating the quantum...
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| Format: | Journal |
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2015
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| Online Access: | http://www.myjurnal.my/public/article-view.php?id=92429 |