First-principles calculations of the structural and electronic properties of AlN, GaN, InN, AlGaN and InGaN
First principles calculations are carried out for AlN, GaN, InN, AlGaN and InGaN in various crystal structures. The computational method used to investigate the structural and the electronic properties is the full potential linear muffin-tin orbital (FP-LMTO) augmented by a plane-wave basis (PLW). E...
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| Format: | Journal |
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International Journal of Nanoelectronics and Materials, Universiti Malaysia Perlis
2009
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| Online Access: | http://www.myjurnal.my/public/article-view.php?id=17950 |