Gate-defined quantum confinement in InSe-based van der Waals heterostructures

Gate-defined quantum confinement in InSe-based van der Waals heterostructures

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manip...

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Bibliographic Details
Main Authors: Hamer, Matthew James, Tovari, Endre, Zhu, Mengjian, Thompson, Michael, Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre, Gorbachev, R.V.
Format: Article
Language:English
Published: American Chemical Society 2018
Online Access:http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/1/Manuscript_Accepted_NanoLetters_15May2018.pdf

Internet

http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/
http://eprints.nottingham.ac.uk/51829/1/Manuscript_Accepted_NanoLetters_15May2018.pdf

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