Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the s...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2018
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| Online Access: | http://eprints.nottingham.ac.uk/51793/ http://eprints.nottingham.ac.uk/51793/ http://eprints.nottingham.ac.uk/51793/ http://eprints.nottingham.ac.uk/51793/8/Balakrishnan_2018_2D_Mater._5_035026.pdf |