Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2016
|
| Online Access: | http://eprints.nottingham.ac.uk/40283/ http://eprints.nottingham.ac.uk/40283/ http://eprints.nottingham.ac.uk/40283/ http://eprints.nottingham.ac.uk/40283/1/Kriegner%20et%20al%20Multiple%20stable%20anisotropic%20magnetoresistance%20N%20Comms%202016.pdf |