GaN-HEMT dynamic ON-state resistance characterisation and modelling
GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Online Access: | http://eprints.nottingham.ac.uk/34921/ http://eprints.nottingham.ac.uk/34921/1/GaN-HEMT%20Dynamic%20ON-state%20Resistance%20characterisation%20and%20Modelling.pdf |